Samsung Unveiled industry’s first 24Gb GDDR7 DRAM with speed of over 40Gbps

Samsung has launched the industry’s first 24-gigabit GDDR7 DRAM, offering the highest capacity and speed to date. This groundbreaking memory solution is tailored to meet the needs of next-generation applications, including data centers and AI workstations. Utilizing advanced process nodes and PAM3 signalling, the GDDR7 achieves an impressive speed of 40 gigabits per second, a 25% increase over its predecessor.

Furthermore, Samsung has integrated power-saving technologies from its mobile products to boost efficiency and cut unnecessary power consumption by over 30%. To ensure stable operation at high speeds, the GDDR7 features power gating design techniques that minimize current leakage.

Samsung plans to start validating this innovative memory solution in next-generation AI computing systems with major GPU customers later this year, with commercialization anticipated in early 2025.

YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics, commented on this achievement:

"After developing the industry’s first 16Gb GDDR7 last year, Samsung has further solidified its technological leadership in the graphics DRAM market with this latest breakthrough. We will continue to lead the graphics DRAM market by delivering next-generation products that align with the growing demands of the AI sector. The 24Gb GDDR7 utilizes 5th-generation 10-nanometer (nm) class DRAM, allowing for a 50% increase in cell density while maintaining the same package size as its predecessor."